An Angstrom-Scale Surface Smooth Technology for Transferred Single-Crystal Silicon Thin Film Layers
碩士 === 國立中央大學 === 機械工程研究所 === 95 === The technique of single-crystal Si layer transfer based on using Hydrogen ion implantation has been widely applied in the fabrication of SOI materials possessing nano-scale device layer with single-crystal quality. However, after Si layer transfer process, a latt...
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| Format: | Others |
| Language: | zh-TW |
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2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/91646643847953386170 |
| Summary: | 碩士 === 國立中央大學 === 機械工程研究所 === 95 === The technique of single-crystal Si layer transfer based on using Hydrogen ion implantation has been widely applied in the fabrication of SOI materials possessing nano-scale device layer with single-crystal quality. However, after Si layer transfer process, a lattice-defect region was formed near the surface of transferred Si layer. Therefore, this unwanted region usually needs an extra chemical mechanical polishing (CMP) process to remove it. The main purpose of this study is to avoid the above polishing process as well as simplify the manufacturing processes. In this study, the removal of lattice-defect region generated after layer transfer by Smart-cut® method used etching approach with specific etchants to etch out it at specific temperature. This etching process could also result in surface smooth of the Si transferred layer. Besides, depositing a polysilicon layer as a sacrificial layer has successfully improved the occurrence of channel effect during ion implantation process and then reduced the difference of ion penetration depth to initially modify the surface roughness of the as-split SOI thin film. The surface roughness could be further decreased after using etching approach to remove the lattice-defect region. The above two steps can make the final surface of the transferred single-crystal Si layer smooth and uniform.
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