Study of Mesh Electrode on Nitride-based Ultraviolet Photodetector
碩士 === 國立中央大學 === 光電科學研究所 === 95 === Due to the high resistance of P-type semiconductor, We have to deposit a Transparent Conduct Layer (TCL) as a Current Spreading Layer and a Electrode at the same time. However, TCL absorbs some power from the incident light that reduces the performance of photo-d...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/48907229121707778816 |