以脈衝磁控濺鍍法製備鋯鈦酸鉛薄膜之參數探討

• Main Author: 莊皓安
• Other Authors: 林義成
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/99033275669243435988

碩士 === 國立彰化師範大學 === 機電工程學系 === 95 === In this study we report on the influences of processes parameter for depositing PZT (Lead zirconate titanate) thin film on the silicon based Ti/Pt bottom electrode prepared by PMS(Pulse Magnetron Sputter) using single metallic target with a post deposition rapid thermal annealing. The process parameters of pulse frequency, duty cycle, O2/Ar flow rate ratio, and post annealing time and temperatures has been discussed. The crystalline of film is analyzed by X-ray diffractiometer and the morphology, surface structures and deposition rates of films is analyzed with SEM. The experiments exhibited that the perovskite structure of PZT thin film can be obtained with post annealing treatment at 650℃ for 40s by PMS process at 100℃. The X-ray diffraction intensity of perovskite structure decreases with annealing time but increases with annealing temperature until 750℃. About PMS parameters, the lower pulse frequency, say 10kHz, enhance the deposition rate and X-ray diffraction intensity of perovskite PZT structure. Also, adjusting duty cycle to 80~85% and lower O2/Ar flow rate ratio have enhancement on the deposition and X-ray intensity. The enhancement of perovskite PZT structure by increasing the film thickness is confirmed by SEM and XRD. The perovskite single phase of PZT thin film can be obtained with pulse frequency under 33kHz, or film thickness over 400nm, or O2/Ar flow ratio under 1/10. The deposition rate reach 9.4nm/min at 60W input power. However, the film cracks and lift-off caused by stress appearing as film thickness larger than 550nm, and hillock phenomenon of Ti/Pt(50nm/150nm) bottom electrode both cause the capacitor devices PZT thin film electrically short.