Effect of Sulfur Treatment on AlGaAs/InGaAs High-Electron Mobility Transistor
碩士 === 國立東華大學 === 材料科學與工程學系 === 95 === In this thesis, we propose AlGaAs/InGaAs/GaAs high-electron mobility transistors (HEMTs) grown by metalorganic chemical- vapor deposition (MOCVD). The HEMTs with different gate alloys, including Au and Pt/Au. Moreover, using the (NH4)2x solution to from the AlG...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/e2aw24 |