Phase Transitions of Si:As Under High Pressure
碩士 === 國立新竹教育大學 === 應用科學系碩士班 === 95 === Phase behavior of arsenic-doped silicon wafers in a diamond-anvil cell have been studied up to ~ 30 GPa by using in-situ Angular-dispersive X-ray diffraction (ADXD). Two samples are included: sample 1 with resistivity 0.001~0.004Ω-cm（1.7 × 10^19～2.8 × 10^19cm-...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/46118737042253848435 |