Rdeuction of Surface Recombination Current by Optimized Ledge Technology
碩士 === 國立宜蘭大學 === 電子工程學系碩士班 === 95 === In this work, the influence of various emitter ledge thickness on the performances of InGaP/GaAs heterojunction bipolar transistors is investigated based on the simulation data. The undesired surface channel phenomenon at the exposed base surface between base c...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/84153648262011375194 |