An Improved InAlAs/InGaAs Metamorphic High Electron Mobility Transistors(MHEMT) with Non-Annealed Ohmic-Recess Structure
碩士 === 國立宜蘭大學 === 電子工程學系碩士班 === 95 === In this thesis, the In0.5Al0.5As/In0.5Ga0.5As metamorphic high electron mobility transistors (MHEMTs), grown by molecular beam epitaxy (MBE) system, have been fabricated and investigated. Due to the narrow gap property of the In0.5Ga0.5As channel layer, better...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/00256529274089090147 |