Investigation of Heterostructure-Emitter Bipolar Transistors with Superlattice-Base Structure

碩士 === 國立高雄師範大學 === 物理學系 === 95 === In this thesis, two heterostructure-emitter bipolar transistors (HEBTs) have been fabricated and investigated. First, by simulated analysis and results the DC performance of InGaP/GaAs npn heterostructure–emitter bipolar transistor with InGaAs/GaAs superlattice–ba...

Full description

Bibliographic Details
Main Authors: I-Hsuan Hsu, 許懿萱
Other Authors: Jung-Hui Tsai
Format: Others
Language:zh-TW
Published: 2007
Online Access:http://ndltd.ncl.edu.tw/handle/20280334928642929762