Electrodeposited copper thin films on ITO/Si substrate for copper metallization

• Main Authors: Jau-Bin,Chiou, 邱肇斌
• Other Authors: Wen-Jauh,Chen
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/10526803229143233062

碩士 === 國立屏東科技大學 === 材料工程所 === 95 === In this work, we use electrodepositing copper to take the place of sputtering copper in copper metallization. First, we use different thickness of ITO to be cathode sample, and electrodeposited copper film in different time. Last, we observe the heat stability of copper films after annealing process. In this experimentation, we use four-point probe and scanning electron microscope to observe the sheet resistance and the surface morphology of samples after electrodeposited copper. The result showed that when thickness of ITO is increase, electrodeposited efficiency will be better, and when electrodeposited time is increase, copper will become continuous membrane. We find that copper film will be broken in annealing treatment process when annealing temperature over 600℃. When thickness of copper film is increase, the copper film will be broken more easily.