| Summary: | 碩士 === 國立中山大學 === 光電工程研究所 === 95 === In this thesis, we use E-Beam lithography to finish the process of DBR laser, 2D Photonic crystal, and Metallic nanoelectrodes. We use the new E-Beam system to define array patterns. By this test, we obtain the minimum linewidth of 50nm, and the maximum working range is 250μm*250μm.
We fabricated the 2D photonic crystal microcavity and DBR laser on the InGaAs/InAlGaAs which was grown by molecular beam epitaxy (MBE) on InP substrate.
For the DBR laser, the length of Multi-mode Interference (MMI) was 90μm to satisfied the emission wavelength and optical modes. We apply a coupled DBR reflector on both sides of MMI. The mirror width was 361nm and the air gap was 388nm.
For the 2D photonic crystal (2D PhC) microcavity, a triangular array of air columns was adopted. The lattice constant and air columns radius are 1137nm and 456nm, respectively. The TE-mode photonic band gap of this structure is corresponding to wavelength range in 1517.01 nm~1617.81 nm. We leave a single defect in the 2D PhC to form 2D PhC microcavity and the corresponding defect modes are 1546.32nm and 1547.74nm. The Micro-PL measurement shows that a defect mode at 1547nm (a/λ=0.74), a surface state at 1351nm (a/λ=0.85), and a standing wave at 1480nm (a/λ=0.78). The maximum Q value is about 400 for the defect mode.
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