Effect of Ga to N flux ratio on the GaN surface morphologies grown by plasma-assisted molecular-beam epitaxy
碩士 === 國立中山大學 === 物理學系研究所 === 95 === We mainly studied the morphology of GaN structures which were grown by plasma-assisted molecular beam epitaxy. The only condition we changed is Ga/N Ratio. Based on observation of reflection high energy electron diffraction (RHEED) patterns, we found all samples...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/s5r637 |