The Study of FeRAM Devices using BZT Ferroelectric Thin Film
博士 === 國立中山大學 === 電機工程學系研究所 === 95 === Recently, many kinds of memory devices had been discussed, such as static random access memory (SRAM), dynamic random access memory (DRAM), the flash memory, ferroelectric random access memory (FRAM), magnetron random access memory (MRAM) and etc. In the volati...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/fmk3km |