A New U Well 1T DRAM Cell Using Bias for Enhancing Floating Body Effect
碩士 === 國立中山大學 === 電機工程學系研究所 === 95 === This article focuses on “Floating Body Effect” of PD-SOI (partial depletion silicon-on-insulator), because the conventional PD-SOI 1T DRAM (one transistor of dynamic random access memory) cell can’t be held impact ionization produced carriers efficiently, so it...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/x7dphn |