Study on the Electrical Analysis and Physical Mechanism of Nanocrystal Nonvolatile Memory
碩士 === 國立中山大學 === 機械與機電工程學系研究所 === 95 === The conventional floating gate NVSM will suffer some limitations for continued scaling of the device structure. The floating gate is a continuous semiconductor thin film which charges are stored in and able to move around. With the scaling of tunneling oxide...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Online Access: | http://ndltd.ncl.edu.tw/handle/n2z384 |