Growth of Self-Assembled Epitaxial Metal Silicide Nanowires
博士 === 國立清華大學 === 材料科學工程學系 === 95 === Self-assembled epitaxial NiSi2 nanowires have been fabricated on (001)Si by reactive deposition epitaxy (RDE). The RDE method promoted nanowire growth since it provides deposited atoms sufficient kinetic energy for movement on the Si surface during the growth of...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/00548018964489274786 |