High-κ dielectrics on germanium MOS - XPS and electrical characteristics
碩士 === 國立清華大學 === 材料科學工程學系 === 95 === Germanium with its electron and hole mobility almost three and four times of those in Silicon, respectively, is now being considered as a high mobility channel to replace Si. However, the native oxides due to their poor thermal stability have been attributed to...
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| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/30255318357462513958 |