Inelastic Electron Tunneling Spectroscopy Study of Metal-Oxide-Semiconductor Device with High-κ Gate Dielectrics
碩士 === 國立清華大學 === 物理學系 === 95 === Inelastic electron tunneling spectroscopy (IETS) has been extensively applied to characterize the microstructure, trap-related states, and interfacial properties in silicon MOS system due to its unique ability to detect the interaction of tunneling electrons with en...
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| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/64527609899000847423 |