The Characteristic Analyses of 0.35um Process LDMOSFETs
碩士 === 國立清華大學 === 電子工程研究所 === 95 === In this thesis, the investigation subject is lateral diffusion metal-oxide-silicon field effect transistor fabricated with 0.35um process technologies. It is divided into two sections, namely measurement and simulation. The former part is fulfilled by measuring t...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/86041848378662286154 |