The Characteristic Analyses of 0.35um Process LDMOSFETs
碩士 === 國立清華大學 === 電子工程研究所 === 95 === In this thesis, the investigation subject is lateral diffusion metal-oxide-silicon field effect transistor fabricated with 0.35um process technologies. It is divided into two sections, namely measurement and simulation. The former part is fulfilled by measuring t...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/86041848378662286154 |
| Summary: | 碩士 === 國立清華大學 === 電子工程研究所 === 95 === In this thesis, the investigation subject is lateral diffusion metal-oxide-silicon field effect transistor fabricated with 0.35um process technologies. It is divided into two sections, namely measurement and simulation. The former part is fulfilled by measuring the Id-Vd and Id-Vg curves with HP4156 and Keithley 236 systems in order to analyze the components’ electrical properties such as on-resistance and breakdown voltage as well as to extract characteristic parameter of DIBL. On the other hand, TCAD tools like Tsuprem4[1] and Medici [2]are used to modulate some portion of the device structure with a well-built 0.35um high voltage process technology to optimize the device performance. Satisfactory results are obtained.
|
|---|