The Electrical and Reliability Properties of Metal-Insulator-Silicon Capacitors and Field-effect Transistors with HfO2 and CeO2 Gate Dielectris
碩士 === 國立清華大學 === 電子工程研究所 === 95 === Metal-insulator-semiconductor (MIS) capacitors and n-channel field effect transistors with HfO2 and CeO2 gate dielectrics were successfully fabricated. The reliability properties such as charge-to-breakdown (QBD) with different types of current stress were charac...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/39316748440623244551 |