The effect of leakage current on retention time of Metal-Ferroelectric-Insulator-Silicon(MFIS) Capacitors and Field-Effect Transistors
碩士 === 國立清華大學 === 電子工程研究所 === 95 === Abstract Al/ Pb (Zr0.53, Ti0.47) O3 (PZT) /ZrO2/Si metal-ferroelectric-insulator semiconductor (MFIS) capacitors and transistors were fabricated. A surface treatment method was used to passivate ZrO2/Si interface and to reduce the leakage current. The wafers were...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/83125896443442220063 |