STI Effect on Flicker Noise in 0.13-um RF CMOSFET
碩士 === 國立清華大學 === 電子工程研究所 === 95 === To improve the performance of high frequency CMOS integrated circuits for achieving high-speed communication systems, the channel length and gate insulator thickness in MOSFET transistors are continuously scaled down. However, as the dimension keeps reducing, man...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/73503976941557594144 |