Simulation of Lateral High Voltage SiC PN Diodes and MOSFETs
碩士 === 國立清華大學 === 電子工程研究所 === 95 === In this paper, we propose and simulate a novel lateral silicon carbide (SiC) high voltage PN diode structure. These devices employ the superjunction principle to reduce the specific on-resistance and to enhance the blocking voltage (BV). Through the excellent mat...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/hwkh5z |