Investigation of electrical characteristics for MOS devices with Molybdenum metal gate
碩士 === 國立清華大學 === 工程與系統科學系 === 95 === Traditional transistor processes use poly-Si as gate material for decades. However, aggressive scaling of channel length and gate oxide thickness in a conventional transistor aggravates the problems of poly-silicon (poly-Si) gate depletion, high gate resistance,...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/45971352489362282262 |