Simulations and Designs forGrowth of GaN in the HVPE Reactor
碩士 === 臺灣大學 === 化學工程學研究所 === 95 === The growth of GaN by HVPE is a popular method. HCl reacts with liquid gallium and generates GaCl. Then the reaction of formation of GaN from GaCl and NH3 occurs on the substrate. This study purpose is to design a HVPE reactor with the uniform growth rate by comput...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/79634410488628378362 |