Simulations and Designs forGrowth of GaN in the HVPE Reactor
碩士 === 臺灣大學 === 化學工程學研究所 === 95 === The growth of GaN by HVPE is a popular method. HCl reacts with liquid gallium and generates GaCl. Then the reaction of formation of GaN from GaCl and NH3 occurs on the substrate. This study purpose is to design a HVPE reactor with the uniform growth rate by comput...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/79634410488628378362 |
| Summary: | 碩士 === 臺灣大學 === 化學工程學研究所 === 95 === The growth of GaN by HVPE is a popular method. HCl reacts with liquid gallium and generates GaCl. Then the reaction of formation of GaN from GaCl and NH3 occurs on the substrate. This study purpose is to design a HVPE reactor with the uniform growth rate by computer simulations. By changing the wafer position and the shower head’s angle we expect to get uniform growth rate in this HVPE reactor. The average growth rate is about 100 μm/hr from results of the simulations. The fastest growth rate on the wafer and the slowest growth rate are comparable. The results form simulations are consistent with the results of the experiments. We not only find an optimistic geometry for growth of GaN, but also the kinetic model we use in this study is suitable for the growth of GaN.
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