Effect of capping superconductive layer and MgO spacer ontunnel magnetoresistance
碩士 === 國立臺灣大學 === 物理研究所 === 95 === Magnetic tunnel junction is a promising candidate for applications in magnetic-storage technology, such as non-volatile memory, read head and magnetic sensors. Much higher tunnel magnetoresistance and lower resistance of junctions provide the feasibility for high-d...
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| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/80787272796198411497 |