| Summary: | 碩士 === 國立臺灣大學 === 物理研究所 === 95 === Before long, it could come true that nanoimprint lithography will replace photolithography in semiconductor manufacture and nano technology. After Stephen Y. Chou, related technologies proposed by C. G. Wilson and G. M. Whiteside make it more possible. One reason is that nanoimprint can save much more cost and time waste in manufacture. More important one is the breakthrough about the diffraction of light. Although nanoimprint is highly developed, the fabrication under low pressure and the mechanics must be investigated.
The researched object of this article is the nanostructure with high aspect ratio. In the first, we will introduce hard mask manufacture. In the method, SiO2 is used as a sacrificial layer to make deeper etch length. The most important part of nanoimpirnt is the leaf off process. Because the mold contains more surface area than the substrate, the adhesion force is asymmetric on both sides. It usually results to fracture or incomplete leaf off. Then we will show how to minimize the adhesion force between mold and polymer by coating an SAM layer. Thereafter, we will compare the results of PS and PMMA under different pressure, imprint time and temperature and find out the best parameters. At last, we will measure the force curve by AFM. The reasons why the mechanics of micro behavior and macro one are different will be discussed in the conclusion.
|
|---|
