Hole Transport Characteristic Of Wrinkling SiGe Thin Film
碩士 === 國立臺灣大學 === 電子工程學研究所 === 95 === Until today, gate length of MOSFET have scaled down to nano-scale. As semiconductor process keep regenerating, ITRS predict that the channel length will smaller than sixteen nano. Process technologic followed technic of nowadays will not keep scaling down. In or...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/27057599880066752124 |