Studies on the optical and structural properties of bulk GaAsSbN epilayers on GaAs
碩士 === 國立臺灣大學 === 電子工程學研究所 === 95 === In this study, the optical and structural properties of dilute nitride GaAsSbN epilayers, coherently grown on GaAs substrates by gas-source molecular beam epitaxy, have been investigated. The lowest room temperature absorption edge among these GaAsSbN is 0.80 eV...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/54694231733680513868 |