Investigation of Ultra-thin Al2O3 High-k Gate Dielectrics Prepared by Shadow Evaporation of Aluminum Followed by Nitric Acid Oxidation for MOS Device
碩士 === 國立臺灣大學 === 電子工程學研究所 === 95 === In this work, the electrical properties of ultra-thin aluminum oxide (Al2O¬3) high-k gate dielectric prepared under different process temperatures are investigated. At first, ultra-thin SiO2 layer was prepared for initial buffer layer, and then the deposited alu...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/29484467477068622657 |