Electrical and optical characteristics of GaN-based LEDs with various doping profiles multi-quantum wells
碩士 === 臺灣大學 === 電機工程學研究所 === 95 === In this thesis, the InGaN/GaN MQW LEDs with various barrier doping structures are investigated. As-grown samples are characterized with low temperature and room temperature photoluminescence measurement for the comparison of the relative internal quantum efficienc...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/95001307492406245209 |