Growth of p-GaN film by adding gallium trichlorideas H scavenger in MOCVD system
碩士 === 國立臺灣科技大學 === 化學工程系 === 95 === p-GaN thin films were grown in three different ambient gases using TMGa, Cp2Mg and NH3 as Ga, Mg and N source, respectively. First, in H2 free ambient and growth pressure of 75 torr, p-GaN thin films had smoother surface, but the electrical properties film couldn...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/d75fs5 |