Study of Tunneling Field Effect Transistors
碩士 === 國立臺灣科技大學 === 電子工程系 === 95 === As MOS devices are scaled down to the deep-submicron process, new reliability problems emerge. These include short-channel effect, hot-carrier effects, and gate-induced-drain leakage (GIDL). The tunneling field effect transistor (TFET) provides less short-channel...
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| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/d53z7c |