| Summary: | 碩士 === 國立臺灣科技大學 === 電子工程系 === 95 === This thesis is divided into two parts. The first part, we can use Hollow Cathode Chemical Vapor Deposition System which is established by our laboratory to deposit oxide under low temperature. We have found out the best parameter and analyzed the electrical characteristics of the oxide.
In the second part, we investigate the performance improvement of the different gate oxide thickness and multi-channel poly-si TFT with rapid thermal annealing. The results of the experiment indicate that the thinner gate oxide thickness with RTA, the more improvement of electrical characteristics. This is because the high temperature of RTA can increase the quality of the oxide, reduce the defects of the oxide, and then improve the electrical characteristics.
In addition, we research the electrical characteristics of multi-channel poly-si TFT. The electrical characteristics of the devices, such as threshold voltage and subthreshold swing, are improved with increasing the channel stripes. It also suppresses the short channel effect when the channel stripes increase.
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