| Summary: | 碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 95 === In this study, aluminum-doped zinc oxide thin films were deposited on Sapphire by Rf magnetron co-sputter system. First of all, we were used ZnO-Al2O3 2wt.% alloy target, and deposited aluminum-doped zinc oxide thin films to find the optimum deposition conditions at room temperature by various Rf power, deposition pressure and Argon gas flow rate. As a subsequent work, we used high purity zinc oxide and aluminum targets, and co-deposited the aluminum-doped zinc oxide thin films with various aluminum atoms content at room temperature. Therefore, in the study we describe the effect of sputtering parameters on the structural, optical and electronic properties. In the results, aluminum-doped zinc oxide thin films with a c-axis preferred (002) orientation after post-annealing at various conditions. The lowest resistivities of 6.55 × 10-4 Ω cm with 90 % transmittance in the visible region and photon energy increased to 3.58 eV after post-annealing at 500oC in vacuum. In the results with aluminum co-doping zinc oxide thin films, the lowest resistivities of 8.79 �e 10-3 Ω cm with 80 % transmittance in the visible region and photon energy increased to 3.42 eV at room temperature with aluminum contents 10 at.%. The main reason is that aluminum atoms can acquire sufficient kinetic energy from the aluminum-doped zinc oxide thin films deposited at room temperature by Rf magnetron sputtering deposition. Thin film carriers, therefore, will have much higher mobility 6.14 cm2/Vs, when compared to the mobility 1.33 cm2/Vs given that the aluminum-doped zinc oxide thin films are produced by independent deposition of ZnO-Al2O3. Furthermore, aluminum atoms can be activated in a more effective manner to significantly improve the electric conductivity of the aluminum-doped zinc oxide thin films fabricated at room temperature.
|
|---|
