Studies on Hot-Carrier Induced Degradation for Deep Submicron and Nanometer MOSFETs
博士 === 國立臺北科技大學 === 機電科技研究所 === 95 === As the MOSFETs shrink into deep submicron and nanometer regimes and most of their operations are unavoidable in high temperature, hot-carrier (HC) induced MOSFET degradation has revealed many phenomena different from the past. Therefore, although HC related iss...
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| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/4n4qkg |