The Fabrication and Electrical Properties of Metal/HfO2/Si(p-type)Field-Effect Transistors
碩士 === 國立雲林科技大學 === 光學電子工程研究所 === 95 === HfO2 thin films with a thickness of 70Å were deposited on p-Si (100) substrate by RF sputtering at 400℃. Si3N4 and SiNO very thin layers will be grown by using N2 plasma to bombard heated Si substrate or sputtering system with Si3N4 target. The Si3N4 and SINO...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/96372923945364110914 |