Equivalent Circuit Model of pHEMT
碩士 === 國立雲林科技大學 === 光學電子工程研究所 === 95 === In this thesis, device models are established for pHEMTs. The device models include a small-signal model and a large-signal model. Conventionally, Yang-Long’s measurement technique was used to extract the source parasitic resistance Rs, and then the cold-F...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/76983379795309628889 |