The Gd2O3 thin films of high dielectric constant was sputtering and research characteristic
碩士 === 國防大學中正理工學院 === 電子工程研究所 === 96 === The purposes of this thesis are to study the physical and electrical characteristics of MOS-Capacitor with high-κ gate oxide (Gd2O3). The Rare Earth metal–oxide (Gd2O3), that has high dielectric constant, was deposited by reactive RF-sputtering system. Gd2O...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/45808837706469354852 |