| Summary: | 碩士 === 國防大學中正理工學院 === 電子工程研究所 === 96 === The purposes of this thesis are to study the physical and electrical characteristics of MOS-Capacitor with high-κ gate oxide (Gd2O3). The Rare Earth metal–oxide (Gd2O3), that has high dielectric constant, was deposited by reactive RF-sputtering system. Gd2O3 thin films were also conferred by electro property and similar material property.
Gd2O3 samples were analyzed and discussed by the following measurements :
(1) C-V and I-V curves : extract dielectric constant, equivalent oxide thickness,
leakage current, and breakdown voltage.
(2) SEM : measure film thickness.
(3) Electron Spectroscopy for Chemical Analysis (ESCA) : This work explores
how varying the annealing temperature, annealing gas and annealing time
was relation to each other and the material chemical property was formed .
Though the dielectric constant and equivalent oxide thickness of Gd2O3 are still not well enough than reported papers, low leakage current and high breakdown voltage are obtained. Follow-up research will be continued to further improve the characteristics of Gd2O3 gate dielectric.
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