The Gd2O3 thin films of high dielectric constant was sputtering and research characteristic

• Main Authors: Yu-Sheng Chiu, 邱昱盛
• Other Authors: P.Y. Kuei
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/45808837706469354852

碩士 === 國防大學中正理工學院 === 電子工程研究所 === 96 === The purposes of this thesis are to study the physical and electrical characteristics of MOS-Capacitor with high-κ gate oxide (Gd2O3). The Rare Earth metal–oxide (Gd2O3), that has high dielectric constant, was deposited by reactive RF-sputtering system. Gd2O3 thin films were also conferred by electro property and similar material property. Gd2O3 samples were analyzed and discussed by the following measurements : (1) C-V and I-V curves : extract dielectric constant, equivalent oxide thickness, leakage current, and breakdown voltage. (2) SEM : measure film thickness. (3) Electron Spectroscopy for Chemical Analysis (ESCA) : This work explores how varying the annealing temperature, annealing gas and annealing time was relation to each other and the material chemical property was formed . Though the dielectric constant and equivalent oxide thickness of Gd2O3 are still not well enough than reported papers, low leakage current and high breakdown voltage are obtained. Follow-up research will be continued to further improve the characteristics of Gd2O3 gate dielectric.