Influence of Frequency and DC Bias on Magnetoimpedance Behaviors in Double-MgO Magnetic Tunnel Junctions

碩士 === 國立中正大學 === 物理所 === 96 === Magnetic tunnel junction (MTJ) with MgO barrier has shown high magnetoresistnace over 500% at room temperature which implies application potential in magnetic random access memory and logic circuits. New configuration of MTJ with dual-MgO barriers has been suggested...

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Bibliographic Details
Main Authors: Chih-yung Lin, 林志勇
Other Authors: Gung Chern
Format: Others
Language:zh-TW
Published: 2008
Online Access:http://ndltd.ncl.edu.tw/handle/84759070545178297486