Preparation of the AlN Thin Film for the Sensing Characteristics and Time Drift Effects Based on the Extended-Gate Field-Effect TransistorPreparation of the AlN Thin Film for the Sensing Characteristics and Time Drift Effects Based on the Extended-Gate
碩士 === 中州技術學院 === 工程技術研究所 === 94
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/648e3y |