Preparation of the AlN Thin Film for the Sensing Characteristics and Time Drift Effects Based on the Extended-Gate Field-Effect TransistorPreparation of the AlN Thin Film for the Sensing Characteristics and Time Drift Effects Based on the Extended-Gate
碩士 === 中州技術學院 === 工程技術研究所 === 94
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2007
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Online Access: | http://ndltd.ncl.edu.tw/handle/648e3y |
Summary: | 碩士 === 中州技術學院 === 工程技術研究所 === 94 |
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