Preparation of the AlN Thin Film for the Sensing Characteristics and Time Drift Effects Based on the Extended-Gate Field-Effect TransistorPreparation of the AlN Thin Film for the Sensing Characteristics and Time Drift Effects Based on the Extended-Gate

Preparation of the AlN Thin Film for the Sensing Characteristics and Time Drift Effects Based on the Extended-Gate Field-Effect TransistorPreparation of the AlN Thin Film for the Sensing Characteristics and Time Drift Effects Based on the Extended-Gate

碩士 === 中州技術學院 === 工程技術研究所 === 94

Bibliographic Details
Main Authors: Huang, An Li, 黃安立
Other Authors: 江榮隆
Format: Others
Language:zh-TW
Published: 2007
Online Access:http://ndltd.ncl.edu.tw/handle/648e3y
Description
Summary:碩士 === 中州技術學院 === 工程技術研究所 === 94

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