Preparation of the AlN Thin Film for the Sensing Characteristics and Time Drift Effects Based on the Extended-Gate Field-Effect TransistorPreparation of the AlN Thin Film for the Sensing Characteristics and Time Drift Effects Based on the Extended-Gate

碩士 === 中州技術學院 === 工程技術研究所 === 94

Bibliographic Details
Main Authors:	Huang, An Li, 黃安立
Other Authors:	江榮隆
Format:	Others
Language:	zh-TW
Published:	2007
Online Access:	http://ndltd.ncl.edu.tw/handle/648e3y

id	ndltd-TW-096CCUT7027001
record_format	oai_dc
spelling	ndltd-TW-096CCUT70270012018-04-10T17:13:44Z http://ndltd.ncl.edu.tw/handle/648e3y Preparation of the AlN Thin Film for the Sensing Characteristics and Time Drift Effects Based on the Extended-Gate Field-Effect TransistorPreparation of the AlN Thin Film for the Sensing Characteristics and Time Drift Effects Based on the Extended-Gate 備製氮化鋁薄膜於延伸式閘極場效電晶體之感測特性及時漂效應 Huang, An Li 黃安立碩士中州技術學院工程技術研究所 94 江榮隆 2007 學位論文 ; thesis 191 zh-TW
collection	NDLTD
language	zh-TW
format	Others
sources	NDLTD
description	碩士 === 中州技術學院 === 工程技術研究所 === 94
author2	江榮隆
author_facet	江榮隆 Huang, An Li 黃安立
author	Huang, An Li 黃安立
spellingShingle	Huang, An Li 黃安立 Preparation of the AlN Thin Film for the Sensing Characteristics and Time Drift Effects Based on the Extended-Gate Field-Effect TransistorPreparation of the AlN Thin Film for the Sensing Characteristics and Time Drift Effects Based on the Extended-Gate
author_sort	Huang, An Li
title	Preparation of the AlN Thin Film for the Sensing Characteristics and Time Drift Effects Based on the Extended-Gate Field-Effect TransistorPreparation of the AlN Thin Film for the Sensing Characteristics and Time Drift Effects Based on the Extended-Gate
title_short	Preparation of the AlN Thin Film for the Sensing Characteristics and Time Drift Effects Based on the Extended-Gate Field-Effect TransistorPreparation of the AlN Thin Film for the Sensing Characteristics and Time Drift Effects Based on the Extended-Gate
title_full	Preparation of the AlN Thin Film for the Sensing Characteristics and Time Drift Effects Based on the Extended-Gate Field-Effect TransistorPreparation of the AlN Thin Film for the Sensing Characteristics and Time Drift Effects Based on the Extended-Gate
title_fullStr	Preparation of the AlN Thin Film for the Sensing Characteristics and Time Drift Effects Based on the Extended-Gate Field-Effect TransistorPreparation of the AlN Thin Film for the Sensing Characteristics and Time Drift Effects Based on the Extended-Gate
title_full_unstemmed	Preparation of the AlN Thin Film for the Sensing Characteristics and Time Drift Effects Based on the Extended-Gate Field-Effect TransistorPreparation of the AlN Thin Film for the Sensing Characteristics and Time Drift Effects Based on the Extended-Gate
title_sort	preparation of the aln thin film for the sensing characteristics and time drift effects based on the extended-gate field-effect transistorpreparation of the aln thin film for the sensing characteristics and time drift effects based on the extended-gate
publishDate	2007
url	http://ndltd.ncl.edu.tw/handle/648e3y
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Preparation of the AlN Thin Film for the Sensing Characteristics and Time Drift Effects Based on the Extended-Gate Field-Effect TransistorPreparation of the AlN Thin Film for the Sensing Characteristics and Time Drift Effects Based on the Extended-Gate

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