| Summary: | 碩士 === 長庚大學 === 機械工程研究所 === 96 === Characterization and Diagnosis of Plasma for Microwave Plasma-aided CVD
Abstract
In the past few years, the plasma-aided chemical vapor deposition (CVD) has played an important role in many industrial fields of biotechnology, photoelectric, and semiconductor etc. The main functions of the plasma-aided CVD are the dry clearing, dry etching, and thin-film deposition. In order to control the quality of the final produces, how to monitor and diagnose the plasma conditions becomes a key issue.
In this research, a microwave plasma CVD system was designed and fabricated, and an integrated plasma diagnosis system, consisting of optical emission spectrometer (OES) and Langmuir probe, was also established. The OES measures the light emission of the plasma with a range of 500~1050 nm to monitor the dynamic variation of certain species (e.g., atoms, irons, molecules) of the plasma. On the other hand, the Langmuir probe provides the I-V curve of the plasma, from which the electron temperature, electron saturation current, floating voltage and plasma density of the plasma can be obtained. Through the data mining of OES and Langmuir probe, we can correlate the plasma conditions with the system parameters (e.g., power, and pressure) to characterize and to make a real-time diagnosis of the plasma for the further process control. A few of experiments show that there are certain relationships between the plasma conditions and the system parameters, and some dynamic fluctuations of plasma can be detected sensitively by OES than by Langmuir probe.
Keywords: microwave plasma-aided CVD, Langmuir probe, OES
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