Wet etching process investigation of patterned sapphire substrate
碩士 === 長庚大學 === 電子工程學研究所 === 96 === In this research, we tried to use H2SO4 and H3PO4 mixed solution with different ratios to etch sapphire substrate at high temperature. With our experiment results, we found that the H2SO4 and H3PO4 solution with the ratio of 3:1 is the best solution for etching sa...
| Main Authors: | , |
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| Format: | Others |
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2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/pu68b2 |