The Characteristics of HfTaO and HfTiO High-K Layers Deposition by Reactive Sputtering of HfTa and HfTi Binary Target
碩士 === 長庚大學 === 電子工程學研究所 === 96 === Abstract As the dimensions of integrated circuits are being scaled down, the physical thickness of SiO2 has been aggressively scaled for high performance and low power complementary metal-oxide-semiconductor (CMOS) logic devices applications, but it will results...
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| Format: | Others |
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2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/97690042782218477066 |