Hafnium Germanium Oxide as Trapping Layer for Nonvolatile Memory Application
碩士 === 長庚大學 === 電子工程學研究所 === 96 === In this thesis, we proposed the fabrication of flash memory device with high-k dielectrics, the HfGeOx, as trapping layer is formed by co-sputtering with Hf and Ge. The thermal stability and charge storage can be improved by GeOx embedding in HfOx. In this thes...
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| Format: | Others |
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2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/04732139717939429570 |